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Chinese researchers have unveiled Poxiao, the fastest flash memory ever created, capable of erasing and rewriting data in just 400 picoseconds—a breakthrough that could revolutionise AI computing and data storage.
As stated in an article on Fudan University’s website, this breakthrough is currently the fastest semiconductor storage technology in existence, capable of matching storage and computation speeds. The article notes that, once scaled up for mass integration, it has the potential to revolutionize existing storage architecture completely.
Developed by scientists at Fudan University, Poxiao breaksexisting speed barriers, operating 100,000 times faster than conventional flash memory. The device, smaller than a grain of rice, is designed to bridge the gap between memory and computing, potentially eliminating bottlenecks in AI processing and high-speed data applications.
Traditional flash memory relies on floating-gate transistors, which require a “warm-up” phase before electrons can move efficiently. The Fudan research team introduced a new approach, called “2D-enhanced hot-carrier injection”, allowing electrons to transition instantly from low-speed to high-speed states without delay.
While the current prototype holds only kilobytes of data, researchers believe Poxiao’s design could lead to next-generation storage solutions that match the speed of AI processing. The breakthrough, published in Nature, is expected to reshape the semiconductor industry and accelerate advancements in AI-driven computing.
